154 citations · 422 across the 12 of their papers we have counts for
7 papers · 1 filter
High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation
Guangzhao Yang, Marek Gluza, Si Yan Koh +5
Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge de…
Open-orbit induced low field extremely large magnetoresistance in graphene/h-BN superlattices
Zihao Wang, Pablo M. Perez-Piskunow, Calvin Pei Yu Wong +13
We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices th…
A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices
Calvin Pei Yu Wong, Cedric Troadec, Andrew T. S. Wee +1
Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interf…
Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
Jing Yang, Fabio Bussolotti, Hiroyo Kawai +1
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atom…
Toward Valley-coupled Spin Qubits
Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau +3
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could pote…
Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons
Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong +1
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present…
Single layer MoS2 nanoribbon field effect transistor
D. Kotekar-Patil, J. Deng, S. L. Wong +2
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 n…