activity
20182024
most citedEvidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

154 citations · 422 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2024

High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation

Guangzhao Yang, Marek Gluza, Si Yan Koh +5

Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge de…

cond-mat.mes-hall2023

Open-orbit induced low field extremely large magnetoresistance in graphene/h-BN superlattices

Zihao Wang, Pablo M. Perez-Piskunow, Calvin Pei Yu Wong +13

We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices th…

physics.optics2023

Engineering Perovskite Emissions via Optical Quasi-Bound-States-in-the-Continuum

Evelin Csányi, Yan Liu, Soroosh Daqiqeh Rezaei +14

Metal halide perovskite quantum dots (PQDs) have emerged as promising materials due to their exceptional photoluminescence (PL) properties. A wide range of applications could benef…

cond-mat.mtrl-sci2022

Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors

Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman +16

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full…

cond-mat.mtrl-sci2022★ 154 cited

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

Ping Kwan Johnny Wong, Wen Zhang, Fabio Bussolotti +22

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dich…

cond-mat.supr-con2022★ 20 cited

Multi-Band Superconductivity in Strongly Hybridized 1T'-WTe/NbSe Heterostructures

Wei Tao, Zheng Jue Tong, Anirban Das +11

The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of supercond…

cond-mat.mtrl-sci2021★ 46 cited

Quantum Transport in Two-Dimensional WS with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Chit Siong Lau, Jing Yee Chee, Yee Sin Ang +8

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semicond…

cond-mat.mes-hall2020★ 46 cited

A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices

Calvin Pei Yu Wong, Cedric Troadec, Andrew T. S. Wee +1

Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interf…

cond-mat.mes-hall2020★ 48 cited

Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies

Jing Yang, Fabio Bussolotti, Hiroyo Kawai +1

While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atom…

cond-mat.mes-hall2020

Toward Valley-coupled Spin Qubits

Kuan Eng Johnson Goh, Fabio Bussolotti, Chit Siong Lau +3

The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could pote…

cond-mat.mes-hall2019

Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons

Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong +1

Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present…

cond-mat.mes-hall2018★ 54 cited

Single layer MoS2 nanoribbon field effect transistor

D. Kotekar-Patil, J. Deng, S. L. Wong +2

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 n…