37 citations · 85 across the 3 of their papers we have counts for
3 papers
Dynamics of hydrogen in silicon at finite temperatures from first-principles
Diana Gomes, Vladimir P. Markevich, Anthony R. Peaker +1
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for t…
Characterisation of negative-U defects in semiconductors
José Coutinho, Vladimir P. Markevich, Anthony R. Peaker
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of…
Acceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Ivana Capan, Tomislav Brodar, José Coutinho +3
We provide direct evidence that the broad Z peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged -SiC, has two compo…