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20192025
most citedAcceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling

37 citations · 100 across the 6 of their papers we have counts for

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Showing 2020Show all

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cond-mat.mtrl-sci2020★ 33 cited

Characterisation of negative-U defects in semiconductors

José Coutinho, Vladimir P. Markevich, Anthony R. Peaker

This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of…