37 citations · 93 across the 5 of their papers we have counts for
4 papers · 1 filter
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich +6
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grow…
Dynamics of hydrogen in silicon at finite temperatures from first-principles
Diana Gomes, Vladimir P. Markevich, Anthony R. Peaker +1
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for t…
Characterisation of negative-U defects in semiconductors
José Coutinho, Vladimir P. Markevich, Anthony R. Peaker
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of…
Acceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Ivana Capan, Tomislav Brodar, José Coutinho +3
We provide direct evidence that the broad Z peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged -SiC, has two compo…