3 citations · 6 across the 4 of their papers we have counts for
6 papers
Spin dephasing in III-V nanowires
Ashish Kumar, Bahniman Ghosh
We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused due to D'yakonov- Perel (DP)…
Spin Relaxation in Germanium Nanowires
Ashish Kumar, Bahniman Ghosh
We use semiclassical Monte Carlo approach along with spin density matrix calculations to model spin polarized electron transport. The model is applied to germanium nanowires and ge…
Non Equilibrium Green's Function Analysis of Double Gate SiGe and GaAs Tunnel FETs
Rahul Mishra, Bahniman Ghosh
In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to…
Device Improvement and Circuit Performance Evaluation of complete SiGe Double Gate Tunnel FETs
Rahul Mishra, Bahniman Ghosh
In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that i…
Spin Relaxation in Silicon Nanowires
Ashish Kumar, Bahniman Ghosh
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the sem…
Noncommutative X-Y model and Kosterlitz Thouless transition
Bahniman Ghosh
Matrix models have been shown to be equivalent to noncommutative field theories. In this work we study noncommutative X-Y model and try to understand Kosterlitz Thouless transition…