activity
19992016
most citedSpin relaxation due to electron-electron magnetic interaction in high Lande g-factor semiconductors

23 citations · 73 across the 22 of their papers we have counts for

collaborators

23 papers

cond-mat.mes-hall2016

Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium

Bhupesh Bishnoi, Bahniman Ghosh

We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarizat…

cond-mat.mes-hall2016★ 3 cited

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Bahniman Ghosh, Rik Dey, Leonard F. Register +1

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating…

cond-mat.mes-hall2014

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

Bahniman Ghosh, Rik Dey, Leonard F. Register +1

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular a…

cond-mat.mes-hall2014

Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions

Bahniman Ghosh, Urmimala Roy, Rik Dey +3

In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the si…

cond-mat.mtrl-sci2014★ 2 cited

3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors

Bhupesh Bishnoi, Bahniman Ghosh

In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled t…

cond-mat.mtrl-sci2014

p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

Bhupesh Bishnoi, Bahniman Ghosh

In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel t…