23 citations · 73 across the 22 of their papers we have counts for
7 papers · 1 filter
Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator
Bahniman Ghosh, Rik Dey, Leonard F. Register +1
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular a…
Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions
Bahniman Ghosh, Urmimala Roy, Rik Dey +3
In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the si…
3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors
Bhupesh Bishnoi, Bahniman Ghosh
In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled t…
p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs
Bhupesh Bishnoi, Bahniman Ghosh
In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel t…
Effect of Diffused Hydrogen on the Conductance of Fe/Mgo/Fe Magnetic Tunnel Junctions: Atomistic Simulation
Ankit kumar verma, Bahniman Ghosh
In this work we have analysed the deterimental effect on conductance caused by diffusion of hydrogen atoms in interstitial voids during fabrication process of magnesium oxide barri…
2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs
Bhupesh Bishnoi, Bahniman Ghosh
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin c…