activity
19992016
most citedSpin relaxation due to electron-electron magnetic interaction in high Lande g-factor semiconductors

23 citations · 73 across the 22 of their papers we have counts for

collaborators
Showing cs.ETShow all

1 paper · 1 filter

cs.ET2014

Performance Analysis of Spin Transfer Torque Random Access Memory with cross shaped free layer using Heusler Alloys by using micromagnetic studies

Tangudu Bharat Kumar, Bhaskar Awadhiya, E. MeherAbhinav +2

We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We…