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20002023
most citedCarrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons

614 citations · 8.8k across the 121 of their papers we have counts for

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Showing 2010Show all

5 papers · 1 filter

cond-mat.mes-hall2010★ 22 cited

Charged basal stacking fault (BSF) scattering in nitride semiconductors

Aniruddha Konar, Tian Fang, Nan Sun +1

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in…

cond-mat.mtrl-sci2010★ 93 cited

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Debdeep Jena, John Simon, Albert +12

The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abr…

cond-mat.mes-hall2010★ 8 cited

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Aniruddha Konar, Tian Fang, Nan Sun +1

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism origi…

cond-mat.mtrl-sci2010★ 1 cited

Effect of optical phonon scattering on the performance of GaN transistors

Debdeep Jena, Siddharth Rajan

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistor…

cond-mat.mtrl-sci2010★ 3 cited

High field transport in graphene

Tian Fang, Aniruddha Konar, Huili Xing +1

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on…