3 citations · 3 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 3 cited
High Mobility Multiple-Channel AlScN/GaN Heterostructures
Aias Asteris, Thai-Son Nguyen, Chuan F. C. Chang +4
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this…
physics.app-ph2023
Accumulation and removal of Si impurities on arising from ambient air exposure
J. P. McCandless, C. A. Gorsak, V. Protasenko +5
Here we report that the source of Si impurities commonly observed on (010) is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…