Accumulation and removal of Si impurities on $\beta -G{a}_2{O}_3$ arising from ambient air exposure

J. P. McCandless, C. A. Gorsak, V. Protasenko +5

Here we report that the source of Si impurities commonly observed on (010) $\beta -G{a}_2{O}_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…