239 citations · 519 across the 8 of their papers we have counts for
Showing 2010Show all
2 papers · 1 filter
cond-mat.mtrl-sci2010★ 27 cited
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
cond-mat.mes-hall2010★ 29 cited
Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
M. J. Calderon, J. Verduijn, G. P. Lansbergen +3
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the c…