Superior Resistance Switching in Monolayer MoS2 Channel Based Gated Binary Resistive RAM via Gate-Bias Dependence and a Unique Forming Process

Ansh, Mayank Shrivastava

In this work, we unveil the effect of RS, induced by a current-voltage hysteresis cycles across CVD-grown monolayer MoS2 based gated RRAM, on its transistors electrical and reliabi…