activity
20192021
most citedSuperior Resistance Switching in Monolayer MoS2 Channel Based Gated Binary Resistive RAM via Gate-Bias Dependence and a Unique Forming Process

11 citations · 13 across the 4 of their papers we have counts for

collaborators
Showing 2019Show all

2 papers · 1 filter

physics.app-ph2019

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Ansh, Jeevesh Kumar, Ravi K Mishra +2

Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, s…

physics.app-ph2019

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Ansh, J Kumar, R K Mishra +2

One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs wi…