11 citations · 13 across the 4 of their papers we have counts for
4 papers
Superior Resistance Switching in Monolayer MoS2 Channel Based Gated Binary Resistive RAM via Gate-Bias Dependence and a Unique Forming Process
Ansh, Mayank Shrivastava
In this work, we unveil the effect of RS, induced by a current-voltage hysteresis cycles across CVD-grown monolayer MoS2 based gated RRAM, on its transistors electrical and reliabi…
Electrothermal Transport Induced Material Re Configuration and Performance Degradation of CVD Grown Monolayer MoS2 Transistors
Ansh, Jeevesh Kumar, Gaurav Sheoran +1
We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes…
H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors
Ansh, Jeevesh Kumar, Ravi K Mishra +2
Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, s…
Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors
Ansh, J Kumar, R K Mishra +2
One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs wi…