629 citations · 2.3k across the 21 of their papers we have counts for
15 papers · 1 filter
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
Valley splitting in silicon from the interference pattern of quantum oscillations
M. Lodari, L. Lampert, O. Zietz +3
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. Thes…
Qubits made by advanced semiconductor manufacturing
A. M. J. Zwerver, T. Krähenmann, T. F. Watson +26
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fuel…
High-fidelity two-qubit gates in silicon above one Kelvin
L. Petit, M. Russ, H. G. J. Eenink +4
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence tim…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…
Universal quantum logic in hot silicon qubits
L. Petit, H. G. J. Eenink, M. Russ +5
Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be p…
Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
B. Paquelet Wuetz, P. L. Bavdaz, L. A. Yeoh +10
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit…
Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
H. G. J. Eenink, L. Petit, W. I. L. Lawrie +3
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one…
Quantum transport properties of industrial Si/SiO
D. Sabbagh, N. Thomas, J. Torres +21
We investigate the structural and quantum transport properties of isotopically enriched Si/SiO stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Hig…
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson +11
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/S…
Spin lifetime and charge noise in hot silicon quantum dot qubits
L. Petit, J. M. Boter, H. G. J. Eenink +10
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. W…
A Crossbar Network for Silicon Quantum Dot Qubits
R. Li, L. Petit, D. P. Franke +10
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-f…
Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
L. M. K. Vandersypen, H. Bluhm, J. S. Clarke +6
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often arg…
Effect of strain, thickness, and local surface environment on electron transport properties of oxygen-terminated copper thin films
Alfonso Sanchez-Soares, Sarah L. T. Jones, John J. Plombon +4
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tig…
Electron transport properties of sub-3-nm diameter copper nanowires
Sarah L. T. Jones, Alfonso Sanchez-Soares, John J. Plombon +4
Density functional theory and density functional tight-binding are applied to model electron transport in copper nanowires of approximately 1 nm and 3 nm diameters with varying cry…