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20112023
most citedEvolutionary Multi-Objective Optimisation of Colour Pixels based on Dielectric Nano-Antennas

140 citations · 533 across the 16 of their papers we have counts for

collaborators

16 papers

physics.optics2023★ 9 cited

Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams

Martin Montagnac, Yoann Brûlé, Aurélien Cuche +11

Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We sh…

physics.optics2022★ 9 cited

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha +10

Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically ac…

cond-mat.mes-hall2020★ 23 cited

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

Jean-Marie Poumirol, Clément Majorel, Nicolas Chery +11

We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a…

cond-mat.mes-hall2020★ 21 cited

Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

Jean-Marie Poumirol, Ioannis Paradisanos, Shivangi Shree +13

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability…

eess.SY2020

3D logic cells design and results based on Vertical NWFET technology including tied compact model

C. Mukherjee, M. Deng, F. Marc +7

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. Thi…

physics.app-ph2018★ 126 cited

Pushing the limits of optical information storage using deep learning

Peter R. Wiecha, Aurélie Lecestre, Nicolas Mallet +1

Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and rob…

physics.app-ph2018

Fano-Resonances in High Index Dielectric Nanowires for Directional Scattering

Peter R. Wiecha, Aurélien Cuche, Houssem Kallel +8

High refractive index dielectric nanostructures provide original optical properties thanks to the occurrence of size- and shape-dependent optical resonance modes. These modes commo…

cond-mat.mes-hall2018★ 32 cited

Enhancement of electric and magnetic dipole transition of rare-earth doped thin films tailored by high-index dielectric nanostructures

Peter R. Wiecha, Clément Majorel, Christian Girard +7

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanom…

cond-mat.mes-hall2017★ 75 cited

Strongly directional scattering from dielectric nanowires

Peter R. Wiecha, Aurélien Cuche, Arnaud Arbouet +8

It has been experimentally demonstrated only recently that a simultaneous excitation of interfering electric and magnetic resonances can lead to uni-directional scattering of visib…

cond-mat.mes-hall2016★ 140 cited

Evolutionary Multi-Objective Optimisation of Colour Pixels based on Dielectric Nano-Antennas

Peter R. Wiecha, Arnaud Arbouet, Christian Girard +3

The rational design of photonic nanostructures consists in anticipating their optical response from simple models or as variations of reference systems. This strategy is limited wh…

cond-mat.mtrl-sci2012★ 35 cited

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

C. Krzeminski, X. -L. Han, G. Larrieu

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanost…

cond-mat.mtrl-sci2011★ 22 cited

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha +8

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantiall…

cond-mat.mtrl-sci2011★ 8 cited

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois +4

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well m…

cond-mat.mtrl-sci2011

A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices

Florent Seichepine, Sven Salomon, Maéva Collet +5

The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on t…

cond-mat.mtrl-sci2011★ 14 cited

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Vikram Passi, Aurélie Lecestre, Christophe Krzeminski +3

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single lay…

cond-mat.mtrl-sci2011★ 19 cited

Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment

Christophe Krzeminski, Guilhem Larrieu, Julien Penaud +2

Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes c…