140 citations · 533 across the 16 of their papers we have counts for
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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha +8
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantiall…
Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois +4
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well m…
A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices
Florent Seichepine, Sven Salomon, Maéva Collet +5
The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on t…
A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
Vikram Passi, Aurélie Lecestre, Christophe Krzeminski +3
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single lay…
Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment
Christophe Krzeminski, Guilhem Larrieu, Julien Penaud +2
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes c…