140 citations · 533 across the 16 of their papers we have counts for
6 papers · 1 filter
Understanding of the Retarded Oxidation Effects in Silicon Nanostructures
C. Krzeminski, X. -L. Han, G. Larrieu
In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanost…
Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha +8
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantiall…
Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois +4
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well m…
A combination of capillary assembly and dielectrophoresis for wafer scale integration of carbon nanotubes-based electrical and mechanical devices
Florent Seichepine, Sven Salomon, Maéva Collet +5
The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on t…
A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
Vikram Passi, Aurélie Lecestre, Christophe Krzeminski +3
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single lay…
Silicon dry oxidation kinetics at low temperature in the nanometric range: Modeling and experiment
Christophe Krzeminski, Guilhem Larrieu, Julien Penaud +2
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes c…