Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey +4

Amorphous vanadium dioxide (VO${}_2$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pre…