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20092021
most citedCorrelating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

199 citations · 870 across the 26 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2015★ 7 cited

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

P. Xu, M. L. Ackerman, S. D. Barber +7

Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar…

cond-mat.mes-hall2014★ 1 cited

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

P. Xu, D. Qi, J. K. Schoelz +9

Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the sur…

cond-mat.mes-hall2014★ 2 cited

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

A. Nath, M. Currie, V. D. Wheeler +11

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflect…

cond-mat.mes-hall2014★ 15 cited

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

M. Neek-Amal, P. Xu, D. Qi +7

Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any…

cond-mat.mes-hall2013★ 92 cited

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Wan Sik Hwang, Pei Zhao, Kristof Tahy +11

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…

cond-mat.mes-hall2013★ 24 cited

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

P. Kühne, V. Darakchieva, J. D. Tedesco +8

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown…