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20022022
most citedElectron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

61 citations · 221 across the 12 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2020★ 5 cited

Realization and transport investigation of a single layer-twisted bilayer graphene junction

Dingran Rui, Luzhao Sun, N. Kang +5

We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemi…

cond-mat.mes-hall2018★ 1 cited

Low-field magnetotransport in graphene cavity devices

G. Q. Zhang, N. Kang, J. Y. Li +4

Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetot…

cond-mat.mes-hall2018★ 5 cited

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Jiayu Li, Li Lin, Guang-Yao Huang +5

Graphene/hexagonal boron nitride (G/-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under…

cond-mat.mes-hall2017★ 61 cited

Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Jiayu Li, Li Lin, Dingran Rui +7

Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved d…

cond-mat.mes-hall2016★ 44 cited

Study of 0- phase transition in hybrid superconductor-InSb nanowire quantum dot devices

S. Li, N. Kang, P. Caroff +1

Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusi…

cond-mat.mes-hall2016★ 23 cited

Schottky barrier and contact resistance of InSb nanowire field effect transistors

Dingxun Fan, N Kang, Sepideh Gorji Ghalamestani +2

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building b…

cond-mat.mes-hall2015★ 31 cited

Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy

Dingxun Fan, Sen Li, N. Kang +6

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50…

cond-mat.mes-hall2007★ 4 cited

Observation of Spin-Orbit Berry's Phase in Magnetoresistance of a Two-Dimensional Hole Anti-dot System

Ning Kang, Eisuke Abe, Yoshiaki Hashimoto +2

We report observation of spin-orbit Berry's phase in the Aharonov-Bohm (AB) type oscillation of weak field magnetoresistance in an anti-dot lattice (ADL) of a two-dimensional hole…