62 citations · 225 across the 12 of their papers we have counts for
12 papers
Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
Zeyu Chi, Corinne Sartel, Yunlin Zheng +12
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic device…
Red Luminescence in H-doped beta-Ga2O3
Thanh Tung Huynh, Ekaterine Chikoidze, Curtis P. Irvine +8
The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was…
Role of interfaces in the biased composition of TbFe(Co) thin films
E. Haltz, R. Weil, J. Sampaio +9
Ferrimagnetic TbFe or TbFeCo amorphous alloy thin films have been grown by co-evaporation in ultra-high vacuum. They exhibit an out-of-plane magnetic anisotropy up to their Curie t…
Interface chemical and electronic properties of LaAlO3/SrVO3 heterostructures
Arnaud Fouchet, Julien E. Rault, Mickaël Allain +4
We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare sin…
Redox reaction enhanced Schottky contact at a \LNO{}(001)/Al interface
Joseph Scola, Bruno Berini, Yves Dumont +2
Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO…
Tuning the Electronic Properties of LAO/STO Interfaces by Irradiating LAO Surface with Low-Energy Cluster Ion Beams
Karl Ridier, Damien Aureau, Bruno Bérini +5
We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by c…
Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
J. Papierska, A. Ciechan, P. Bogusławski +16
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several con…
Hubbard band or oxygen vacancy states in the correlated electron metal SrVO?
S. Backes, T. C. Rödel, F. Fortuna +19
We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO. By means of angle-resolved photoemission (ARPES) synchrotron ex…
Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO
M. Godlewski, A. Wojcik-Glodowska, E. Guziewicz +5
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS…
Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
W. Pacuski, J. Suffczynski, P. Osewski +10
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift…
Anomalous Electronic Susceptibility in Bi2sr2cuo6+d
G. Le Bras-Jasmin, Z. Konstantinovic, J. P. Carton +6
We report magnetic susceptibility performed on overdoped Bi2Sr2CuO6+d powders as a function of oxygen doping d and temperature T. The decrease of the spin susceptibility chis with…
Anomalous electronic susceptibility in Bi2Sr2CuO6+d and comparison with other overdoped cuprates
G. Le Bras, Z. Konstantinovic, J-P. Carton +6
We report magnetic susceptibility performed on overdoped Bi2Sr2CuO6+d powders as a function of oxygen doping d and temperature T. The decrease of the spin susceptibility with incre…