Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO

Abstract

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.

arXiv comment17 pages, 4 figures, 32 references

References in corpus (3)

• Role of Disorder in Mn:GaAs, Cr:GaAs, and Cr:GaN
• Optical investigation of electronic states of Mn4+ ions in p-type GaN
• Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

Cited by in corpus (6)

• ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition
• Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties
• Metastability of Mn${}^{3+}$ in ZnO driven by strong $d$(Mn) intrashell Coulomb repulsion: experiment and theory
• Puzzling magneto-optical properties of ZnMnO films
• Role of interface in ferromagnetism of (Zn,Co)O films
• Optical and magnetic properties of ZnCoO layers