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physics.app-ph2020★ 56 cited
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
physics.app-ph2019★ 39 cited
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…