activity
20022019
most citedIon beam sputtering induced ripple formation in thin metal films

82 citations · 106 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2019

Ar+-sputtered Ge (001) surface nanostructuring at high implant temperature

Debasree Chowdhury, Debabrata Ghose

Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 30…

cond-mat.mtrl-sci2016★ 9 cited

Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

Debasree Chowdhury, Debabrata Ghose

Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 d…

cond-mat.mtrl-sci2016

Temperature and high fluence induced ripple rotation on Si(100) surface

Debasree Chowdhury, Biswarup Satpati, Debabrata Ghose

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatur…

cond-mat.mtrl-sci2014

Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick +2

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follo…

cond-mat.mtrl-sci2009★ 2 cited

Formation of ripple pattern on silicon surface by grazing incidence ion beam sputtering

Safiul A. Mollick, D. Ghose

Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer leng…

cond-mat.mtrl-sci2008★ 5 cited

Study of low energy Si and Cs implantation induced amorphization effects in Si(100)

H. P. Lenka, B. Joseph, P. K. Kuiri +4

The damage growth and surface modifications in Si(100), induced by 25 keV Si cluster ions, as a function of fluence, , has been studied using atomic force microscopy (AFM)…