6 papers · 1 filter
Self-assembled nanowires on semiconductor surfaces
J. H. G. Owen, K. Miki, D. R. Bowler
A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoin…
A spin-polarised first principles study of short dangling bond wires on Si(001)
C. F. Bird, D. R. Bowler
Short dangling bond wires (DB wires), fabricated on H-terminated Si(001) surfaces, show patterns of displacement that depend on their length. We have performed density function cal…
Interaction between electronic structure and strain in Bi nanolines on Si(001)
J. H. G. Owen, K. Miki, D. R. Bowler
Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surf…
Diffusion of a polaron in dangling bond wires on Si(001)
M. Todorovic, A. J. Fisher, D. R. Bowler
Injecting charge into dangling bond wires on Si(001) has been shown to induce polarons, which are weakly coupled to the underlying bulk phonons. We present elevated temperature tig…
Formation of clean dimers during gas-source growth of Si(001)
D. R. Bowler
Elevated temperature STM measurements have shown that one key phase during gas-source homoepitaxy of Si(001) is the formation of clean Si ad-dimers from hydrogenated ad-dimers, tho…
Tight binding studies of strained Ge/Si(001) growth
K. Li, D. R. Bowler, M. J. Gillan
Experimental observations of the growth of more than one monolayer of Ge on Si(001) show a progression of effects beyond the (2xN) reconstruction which is seen at submonolayer cove…