Tight binding studies of strained Ge/Si(001) growth
arXiv:cond-mat/0210315 · doi:10.1016/S0039-6028(02)02686-9
Abstract
Experimental observations of the growth of more than one monolayer of Ge on Si(001) show a progression of effects beyond the (2xN) reconstruction which is seen at submonolayer coverages: a reduction in the value of N with coverage; formation of straight trenches of missing dimer vacancies; and formation of the (MxN) ``patch'' structure. We present tight binding calculations which investigate the energetics and geometries associated with these effects, and extend our earlier treatment of formation energies for reconstructions with different stoichiometries to the case of several layers of Ge. The results provide explanations for the various effects seen, and are in good agreement with experimental observations.
arXiv comment16 pages, 4 figures, submitted to Surface Science
References in corpus (1)
Cited by in corpus (4)
- Recent progress with large-scale ab initio calculations: the CONQUEST code
- Comparative study of dimer vacancies and dimer-vacancy lines on Si(001) and Ge(001)
- Strain effect and intermixing at the Si surface: A hybrid quantum and molecular mechanics study
- Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation