Self-assembled nanowires on semiconductor surfaces
arXiv:cond-mat/0510825 · doi:10.1007/s10853-006-0246-x
Abstract
A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of creating interconnects at the nanometre scale (though possibly for carrying signal rather than current), as well as from the standpoint of traditional materials science and surface science. We survey these families and consider their physical and electronic structure, as well as their formation and reactivity. Particular attention is paid to rare earth nanowires and the Bi nanoline, both of which self-assemble on Si(001).
32 pages, 30 figures
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Cited by in corpus (11)
- Modeling 1D structures on semiconductor surfaces: Synergy of theory and experiment
- Evolutionary approach for finding the atomic structure of steps on stable crystal surfaces
- Pb chains on reconstructed Si(335) surface
- One dimensional Si-in-Si(001) template for single-atom wire growth
- Endotaxial Si nanolines in Si(001):H
- First principles study of Si(335)-Au surface
- Ab initio study of subsurface diffusion of Cu on the H-passivated Si(001) surface
- Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study
- Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)
- Transfer matrix solution of the Wako-Saitô-Muñoz-Eaton model augmented by arbitrary short range interactions
- Building bridges: matching density functional theory with experiment