36 citations · 91 across the 13 of their papers we have counts for
13 papers · 1 filter
On the Phase Boundaries of the Integer Quantum Hall Effect. II
S. S. Murzin
It is shown that the statements about the observation of the transitions between the insulating phase and the integer quantum Hall effect phases with the quantized Hall conductivit…
Resistivity of two-dimensional systems in a magnetic field at the filling factor 1/2
S. S. Murzin
Experimental data available in the literature on the diagonal resistivity of GaAs/AlGaAs heterostructures in a magnetic field at the filling factor 1/2 have been compared with the…
Resistivity peak values at transition between fractional quantum Hall states
S. S. Murzin
Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretica…
Fractional quantum Hall effect without energy gap
S. S. Murzin, S. I. Dorozhkin, G. E. Tsydynzhapov +1
In the fractional quantum Hall effect regime we measure diagonal () and Hall () magnetoresistivity tensor components of two-dimensional electron system (2DES) in ga…
Reply to Comment on "Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers"
S. S. Murzin, A. G. M. Jansen
Reply to A. M. M. Pruisken and I. S. Burmistrov: cond-mat/0504763
Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures
S. S. Murzin, S. I. Dorozhkin, D. K. Maude +1
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in…
Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands
S. S. Murzin, M. Weiss, D. A. Knyazev +2
With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in…
Topological oscillations of the magnetoconductance in disordered GaAs layers
S. S. Murzin, A. G. M. Jansen, I. Claus
Oscillatory variations of the diagonal () and Hall () magnetoconductances are discussed in view of topological scaling effects giving rise to the quantum Hall effec…
Comment on ""Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures"
S. S. Murzin
It is shown that recent and earlier experiments, which claimed to observe a disagreement with the global phase diagram (GPD) of the quantum Hall effect, do not, in fact, contradict…
Universal flow diagram for the magnetoconductance in disordered GaAs layers
S. S. Murzin, M. Weiss, A. G. M. Jansen +1
The temperature driven flow lines of the diagonal and Hall magnetoconductance data (G_{xx},G_{xy}) are studied in heavily Si-doped, disordered GaAs layers with different thicknesse…
Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime
S. S. Murzin, M. Weiss, A. G. M. Jansen +1
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The tempera…
Quantum Hall effect at low magnetic fields due to electron-electron interaction: A Comment on cond-mat/9906450 (published in Phys. Rev. Lett. 84, 3141 (2000))
S. S. Murzin, A. G. M. Jansen
In a recent preprint cond-mat/9906450 (published in PRL 84, 3141 (2000)) Bodo Huckestein showed that at real experimental conditions it is not possible to observe the quantum Hall…
Quantum Hall Effect induced by electron-electron interaction in disordered GaAs layers with 3D spectrum
S. S. Murzin, I. Claus, A. G. M. Jansen +3
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons…