activity
19982010
most citedUniversal flow diagram for the magnetoconductance in disordered GaAs layers

36 citations · 91 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2010★ 2 cited

On the Phase Boundaries of the Integer Quantum Hall Effect. II

S. S. Murzin

It is shown that the statements about the observation of the transitions between the insulating phase and the integer quantum Hall effect phases with the quantized Hall conductivit…

cond-mat.mes-hall2009

Resistivity of two-dimensional systems in a magnetic field at the filling factor 1/2

S. S. Murzin

Experimental data available in the literature on the diagonal resistivity of GaAs/AlGaAs heterostructures in a magnetic field at the filling factor 1/2 have been compared with the…

cond-mat.mes-hall2008★ 1 cited

Resistivity peak values at transition between fractional quantum Hall states

S. S. Murzin

Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretica…

cond-mat.mes-hall2006

Fractional quantum Hall effect without energy gap

S. S. Murzin, S. I. Dorozhkin, G. E. Tsydynzhapov +1

In the fractional quantum Hall effect regime we measure diagonal () and Hall () magnetoresistivity tensor components of two-dimensional electron system (2DES) in ga…

cond-mat.mes-hall2005★ 3 cited

Reply to Comment on "Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers"

S. S. Murzin, A. G. M. Jansen

Reply to A. M. M. Pruisken and I. S. Burmistrov: cond-mat/0504763

cond-mat.mes-hall2005★ 27 cited

Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

S. S. Murzin, S. I. Dorozhkin, D. K. Maude +1

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in…