Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

Abstract

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.

arXiv comment4 pages, 4 figures

References in corpus (10)

• Collapse of Spin-Splitting in the Quantum Hall Effect
• The Quantized Hall Insulator: A New Insulator in Two-Dimensions
• Universal relation between longitudinal and transverse conductivities in quantum Hall effect
• Modular invariance, universality and crossover in the quantum Hall effect
• Universal flow diagram for the magnetoconductance in disordered GaAs layers
• Landau level mixing and spin degeneracy in the quantum Hall effect
• Duality in the Quantum Hall Effect - the Role of Electron Spin
• Termination of the spin-resolved integer quantum Hall effect
• The Effects of Disorder on the $\nu =1$ Quantum Hall State
• Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime

Cited by in corpus (3)

• An experimental study on $\Gamma$(2) modular symmetry in the quantum Hall system with a small spin-splitting
• Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting
• An RG potential for the quantum Hall effects