R. Karsthof

activity

20192022

most citedConversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

85 citations · 239 across the 7 of their papers we have counts for

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Showing 2021Show all

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cond-mat.mtrl-sci2021★ 18 cited

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$ -type 4 $H$ -SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov +1

Electrical properties of point defects in 4 $H$ -SiC have been studied extensively, but those related to carbon interstitials (C $_{i}$ ) have remained surprisingly elusive until now.…

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$ -type 4 $H$ -SiC