85 citations · 239 across the 7 of their papers we have counts for
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Identification of Li and V acceptor levels in doped nickel oxide
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation…
Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas +1
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photolum…
The nickel vacancy acceptor in NiO: doping beyond thermodynamic equilibrium
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer +1
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nic…