activity
20192022
most citedConversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

85 citations · 239 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2022★ 2 cited

Light absorption and emission by defects in doped nickel oxide

Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas +3

Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary el…

cond-mat.mtrl-sci2021★ 18 cited

Formation of carbon interstitial-related defect levels by thermal injection of carbon into -type 4-SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov +1

Electrical properties of point defects in 4-SiC have been studied extensively, but those related to carbon interstitials (C) have remained surprisingly elusive until now.…

cond-mat.mtrl-sci2020

Identification of Li and V acceptor levels in doped nickel oxide

Robert Karsthof, Holger von Wenckstern, Marius Grundmann

Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation…

cond-mat.mtrl-sci2020★ 85 cited

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas +1

The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photolum…

cond-mat.mtrl-sci2020★ 49 cited

The nickel vacancy acceptor in NiO: doping beyond thermodynamic equilibrium

Robert Karsthof, Arthur Markus Anton, Friedrich Kremer +1

This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nic…

cond-mat.mtrl-sci2019★ 34 cited

Nickel oxide-based heterostructures with large band offsets

Robert Karsthof, Holger von Wenckstern, Jesus Zuniga-Perez +2

We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxi…

cond-mat.other2019★ 51 cited

Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

Robert Karsthof, Marius Grundmann, Markus Arthur Anton +1

In this work, we revisit the issue of the nature of electronic transport in nickel oxide (NiO) and show that the widely used model of free small polaron hopping, initially raised t…