51 citations · 53 across the 3 of their papers we have counts for
6 papers
Light absorption and emission by defects in doped nickel oxide
Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas +3
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary el…
Identification of Li and V acceptor levels in doped nickel oxide
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation…
Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas +1
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photolum…
The nickel vacancy acceptor in NiO: doping beyond thermodynamic equilibrium
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer +1
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nic…
Nickel oxide-based heterostructures with large band offsets
Robert Karsthof, Holger von Wenckstern, Jesus Zuniga-Perez +2
We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxi…
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide
Robert Karsthof, Marius Grundmann, Markus Arthur Anton +1
In this work, we revisit the issue of the nature of electronic transport in nickel oxide (NiO) and show that the widely used model of free small polaron hopping, initially raised t…