191 citations · 394 across the 6 of their papers we have counts for
7 papers
Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization
Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez +4
Due to strong spin-orbit coupling, large Landé -factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platf…
20 Second Parity Lifetime in an InAs--Pb Tetron Device
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +162
A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle…
Distinct Lifetimes for and Loop Measurements in a Majorana Tetron Device
Morteza Aghaee, Zulfi Alam, Rikke Andersen +164
We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superco…
Strain Engineering for High-Performance Phase Change Memristors
Wenhui Hou, Ahmad Azizimanesh, Aditya Dey +7
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed sta…
Moiré Engineering in 2D Heterostructures with Process-Induced Strain
Tara Peña, Aditya Dey, Shoieb A. Chowdhury +6
We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced s…
Strain Engineering 2D MoS with Thin Film Stress Capping Layers
Tara Peña, Shoieb A. Chowdhury, Ahmad Azizimanesh +3
We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS via the deposition of stressed thin films to…
Strain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor
Wenhui Hou, Ahmad Azizimanesh, Arfan Sewaket +5
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-sta…