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20192026
most citedStrain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor

191 citations · 312 across the 5 of their papers we have counts for

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cond-mat.mes-hall2026

Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization

Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez +4

Due to strong spin-orbit coupling, large Landé -factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platf…

cond-mat.mes-hall2026

20 Second Parity Lifetime in an InAs--Pb Tetron Device

Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +162

A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle…

cond-mat.mes-hall2025

Distinct Lifetimes for and Loop Measurements in a Majorana Tetron Device

Morteza Aghaee, Zulfi Alam, Rikke Andersen +164

We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superco…

cond-mat.mes-hall2022★ 33 cited

Moiré Engineering in 2D Heterostructures with Process-Induced Strain

Tara Peña, Aditya Dey, Shoieb A. Chowdhury +6

We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced s…

cond-mat.mes-hall2020

Strain Engineering 2D MoS with Thin Film Stress Capping Layers

Tara Peña, Shoieb A. Chowdhury, Ahmad Azizimanesh +3

We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS via the deposition of stressed thin films to…