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cond-mat.mes-hall2026
Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization
Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez +4
Due to strong spin-orbit coupling, large Landé -factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platf…
cond-mat.mes-hall2026
20 Second Parity Lifetime in an InAs--Pb Tetron Device
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +162
A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle…