170 citations · 755 across the 14 of their papers we have counts for
14 papers
Abnormal Surface Nonlinear Optical Responses in Topological Materials
Haowei Xu, Hua Wang, Ju Li
Nonlinear optical (NLO) responses of topological materials are under active research in recent years. Yet by far, most studies focused on the bulk properties, whereas the surface e…
Light-induced quantum anomalous Hall effect on the 2D surfaces of 3D topological insulators
Haowei Xu, Jian Zhou, Ju Li
Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time-reversa…
Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals
Qingqing Ji, Cong Su, Nannan Mao +7
Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition (CVD) growth of…
Colossal switchable photocurrents in topological Janus transition metal dichalcogenides
Haowei Xu, Hua Wang, Jian Zhou +3
Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light-current…
Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution
Yunfan Guo, Yuxuan Lin, Kaichen Xie +21
Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the com…
Light-Induced Static Magnetization: Nonlinear Edelstein Effect
Haowei Xu, Jian Zhou, Hua Wang +1
We theoretically and computationally demonstrate that static magnetization can be generated under light illumination via nonlinear Edelstein effect (NLEE). NLEE is applicable to se…
Giant Photonic Response of Mexican-hat Topological Semiconductors for Mid-infrared to THz Applications
Haowei Xu, Jian Zhou, Hua Wang +1
The mid-infrared (MIR), far-infrared (FIR) to terahertz (THz) frequencies are the least developed parts of the electromagnetic spectrum for applications. Traditional semiconductor…
Pure Spin Photocurrent in Non-centrosymmetric Crystals: Bulk Spin Photovoltaic Effect
Haowei Xu, Hua Wang, Jian Zhou +1
Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovolt…
Molecular monolayer stabilizer for multilayer 2D materials
Cong Su, Zongyou Yin, Qing-Bo Yan +15
2D van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines are high…
Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides
Akshay Singh, Yifei Li, Balint Fodor +6
The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogeni…
Competing dynamics of single phosphorus dopant in graphene with electron irradiation
Cong Su, Mukesh Tripathi, Qing-Bo Yan +10
Atomic-level structural changes in materials are important but challenging to study. Here, we demonstrate the dynamics and the possibility of manipulating a phosphorus dopant atom…
Diffusive versus displacive contact plasticity of nanoscale asperities: Temperature- and velocity-dependent strongest size
Wei Guo, Zhao Wang, Ju Li
We predict a strongest size for the contact strength when asperity radii of curvature decrease below ten nanometers. The reason for such strongest size is found to be correlated wi…
Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
Rui He, Jia-An Yan, Zongyon Yin +5
We investigate the ultralow-frequency Raman response of atomically thin ReS2, a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and…
Tailoring exciton dynamics by elastic strain-gradient in semiconductors
Xuewen Fu, Cong Su, Qiang Fu +7
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials.…