Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides

Abstract

The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2 and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. Through Mueller matrix measurements and generalized ellipsometry, we explicitly measure the direction of the ordinary optical axis. We support our measurements with density functional theory (DFT) calculations, which agree with our measurements and predict giant birefringence. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e. displacive, order-order) switching.

arXiv commentsupplementary at end of document. 6 main figures

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Cited by in corpus (4)

• Refractive uses of layered and two-dimensional materials for integrated photonics
• Growth kinetics and atomistic mechanisms of native oxidation of ZrS${}_x$Se${}_{2-x}$ and MoS${}_2$ crystals
• Effect of electron-irradiation on layered quantum materials
• Stress-induced Martensitic transformation in epitaxial Ni-Mn-Ga thin films and its correlation to optical and magneto-optical properties