activity
20152026
most citedLayer Hall effect in a 2D topological Axion antiferromagnet

337 citations · 413 across the 7 of their papers we have counts for

collaborators

7 papers

astro-ph.EP2026

Nanoscale Storage of Incompatible Elements at Olivine Grain Boundaries in Natural Basalts

Wenhao Zhao, Reid Cooper, Stephen Parman +2

Grain boundaries are pervasive in polycrystalline olivine, yet their structure and trace-element chemistry remain poorly constrained. We characterize boundaries in undeformed olivi…

cond-mat.mtrl-sci2022

3D Nanoscale Mapping of Short-Range Order in GeSn Alloys

Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang +5

GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretic…

cond-mat.mtrl-sci2021★ 337 cited

Layer Hall effect in a 2D topological Axion antiferromagnet

Anyuan Gao, Yu-Fei Liu, Chaowei Hu +33

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At…

cond-mat.supr-con2021★ 5 cited

Imaging Se diffusion across the FeSe/SrTiO interface

Samantha O'Sullivan, Ruizhe Kang, Jules A. Gardener +3

Monolayer FeSe on SrTiO superconducts with reported as high as 100 K, but the dramatic interfacial enhancement remains poorly understood. Oxygen v…

cond-mat.mes-hall2019★ 28 cited

Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides

Akshay Singh, Yifei Li, Balint Fodor +6

The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogeni…

cond-mat.mtrl-sci2018★ 35 cited

Large and Persistent Photoconductivity due to Hole-Hole Correlation in CdS

Han Yin, Austin Akey, R. Jaramillo

Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photo-generated minority carriers at crystal defects. Theory has suggested that anion vaca…

cond-mat.mtrl-sci2015★ 8 cited

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

R. Jaramillo, Amanda Youssef, Austin Akey +3

We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the…