activity
19972019
most citedTight-Binding model for semiconductor nanostructures

62 citations · 518 across the 28 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2017★ 16 cited

Non-invasive control of excitons in two-dimensional materials

Christina Steinke, Daniel Mourad, Malte Rösner +5

We investigate how external screening shapes excitons in two-dimensional (2d) semiconductors embedded in laterally structured dielectric environments. An atomic scale view of these…

cond-mat.mtrl-sci2014★ 6 cited

Determination of the Fermi Level Position in Dilute Magnetic GaMnN Films

Stefan Barthel, Gerd Kunert, Mariuca Gartner +6

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite GaMnN films with and as grown by molecular…

cond-mat.mtrl-sci2013★ 17 cited

Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction

Stefan Barthel, Kolja Schuh, Oliver Marquardt +4

In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effec…

cond-mat.mtrl-sci2011★ 19 cited

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

Daniel Mourad, Gerd Czycholl

For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the elec…

cond-mat.mtrl-sci2010★ 28 cited

Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe

Daniel Mourad, Carsten Kruse, Sebastian Klembt +5

Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap…

cond-mat.mtrl-sci2008★ 60 cited

A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

Oliver Marquardt, Daniel Mourad, Stefan Schulz +3

In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for th…