209 citations · 564 across the 8 of their papers we have counts for
Showing 2014 · cond-mat.mtrl-sciShow all
2 papers · 2 filters
cond-mat.mtrl-sci2014★ 13 cited
Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
J. L. Qi, K. Nagashio, T. Nishimura +1
A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001…
cond-mat.mtrl-sci2014★ 25 cited
Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura +1
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annea…