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19962019
most citedSymmetry classification of energy bands in graphene

43 citations · 283 across the 14 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

12 papers · 1 filter

cond-mat.mes-hall2019

Irradiation-induced metal-insulator transition in monolayer graphene

I. Shlimak, E. Zion, A. Butenko +5

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. D…

cond-mat.mes-hall2016★ 10 cited

Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

A. Butenko, E. Zion, Yu. Kaganovskii +6

The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer g…

cond-mat.mes-hall2016★ 21 cited

Effect of annealing on Raman scattering spectra of monolayer graphene samples gradually disordered by ion irradiation

E. Zion, A. Butenko, Yu. Kaganovskii +6

The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C and Xe ions were measured after annealing in high vacuu…

cond-mat.mes-hall2015★ 21 cited

Hopping magnetoresistance in ion irradiated monolayer graphene

I. Shlimak, E. Zion, A. V. Butenko +8

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to K in…

cond-mat.mes-hall2015★ 31 cited

Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation

E. Zion, A. Haran, A. V. Butenko +9

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different do…

cond-mat.mes-hall2014★ 34 cited

Raman scattering and electrical resistance of highly disordered graphene

I. Shlimak, A. Haran, E. Zion +9

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography…

cond-mat.mes-hall2013★ 43 cited

Energy bands in graphene: Comparison between the tight-binding model and {\it ab initio} calculations

E. Kogan, V. U. Nazarov, V. M. Silkin +1

We compare the classification of the electron bands in graphene, obtained by group theory algebra in the framework of tight-binding model (TBM), with that calculated in the density…

cond-mat.mes-hall2013

Space Group Symmetry Classification of Energy Bands in Graphene and Destruction of Dirac Points by Supercell Potential

E. Kogan, V. U. Nazarov, V. M. Silkin +1

In the previous publications (E. Kogan and V. U. Nazarov, Phys. Rev. B {\bf 85}, 115418 (2012) and E. Kogan, Graphene {\bf 2}, 74 (2013)) we presented point group symmetry classifi…

cond-mat.mes-hall2012★ 20 cited

Symmetry classification of energy bands in graphene and silicene

E. Kogan

We present the results of the symmetry classification of the electron energy bands in graphene and silicene using group theory algebra and the tight--binding approximation. The ana…

cond-mat.mes-hall2012★ 43 cited

Symmetry classification of energy bands in graphene

E. Kogan, V. U. Nazarov

We present the results of the first principle calculations of the energy bands in graphene and their symmetry classification. The valence bands and four lowest conduction bands are…

cond-mat.mes-hall2011★ 10 cited

Next-nearest-neighbor Tight-binding Model of Plasmons in Graphene

V. Kadirko, K. Ziegler, E. Kogan

In this paper we investigate the influence of the next-nearest-neighbor coupling of tight-binding model of graphene on the spectrum of plasmon excitations. The nearest-neighbor tig…

cond-mat.mes-hall1996★ 42 cited

Measurement of the conductance distribution function at a quantum Hall transition

D. H. Cobden, E. Kogan

We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic f…