paper

Measurement of the conductance distribution function at a quantum Hall transition

arXiv:cond-mat/9606114 · doi:10.1103/PhysRevB.54.R17316

Abstract

We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we find a conductance distribution that is approximately uniform between zero and . We point out that this is consistent with the prediction of random -matrix theory for a conductor with single-channel leads in a magnetic field.

10 pages, Revtex, 3 eps figures; final version with slight changes, accepted for publication in PRB Rapid Communications

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