activity
19982013
most citedTheory of ferromagnetic (III,Mn)V semiconductors

1.2k citations · 3.4k across the 29 of their papers we have counts for

collaborators
Showing 2008Show all

9 papers · 1 filter

cond-mat.other200875 cited

Semiclassical framework for the calculation of transport anisotropies

Karel Vyborny, Alexey A. Kovalev, Jairo Sinova +1

We present a procedure for finding the exact solution to the linear-response Boltzmann equation for two-dimensional anisotropic systems and demonstrate it on examples of non-crysta…

cond-mat.mtrl-sci200834 cited

Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As

E. Rozkotova, P. Nemec, N. Tesarova +5

We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession…

cond-mat.mtrl-sci200823 cited

Low voltage control of ferromagnetism in a semiconductor p-n junction

M. H. S. Owen, J. Wunderlich, V. Novak +8

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current infor…

cond-mat.mtrl-sci200852 cited

Light-induced magnetization precession in GaMnAs

E. Rozkotova, P. Nemec, P. Horodyska +7

We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magne…

cond-mat.mtrl-sci20088 cited

Laser-induced Precession of Magnetization in GaMnAs

E. Rozkotova, P. Nemec, D. Sprinzl +7

We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on…

cond-mat.str-el20082 cited

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

A. D. Giddings, O. N. Makarovsky, M. N. Khalid +8

We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The…