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Interlayer exchange coupling in (Ga,Mn)As based multilayers
A. D. Giddings, T. Jungwirth, B. L. Gallagher
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresis…
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
V. Holy, Z. Matej, O. Pacherova +4
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As dilute…
Anomalous Hall effect in 2D Dirac band: link between Kubo-Streda formula and semiclassical Boltzmann equation approach
N. A. Sinitsyn, A. H. MacDonald, T. Jungwirth +2
The anomalous Hall effect (AHE) is a consequence of spin-orbit coupling in a ferromagnetic metal and is related primarily to density-matrix response to an electric field that is of…
Theory of ferromagnetic (III,Mn)V semiconductors
T. Jungwirth, Jairo Sinova, J. Masek +2
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental phy…
Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics
J. Wunderlich, T. Jungwirth, B. Kaestner +10
Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the…
Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems
A. B. Shick, F. Maca, J. Masek +1
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of…