activity
20032020
most citedA universal description of III-V/Si epitaxial growth processes

60 citations · 195 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2020★ 39 cited

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

C. Cornet, S. Charbonnier, I. Lucci +15

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…

cond-mat.mtrl-sci2018★ 60 cited

A universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau +15

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…

cond-mat.mtrl-sci2007★ 45 cited

Self-Organized Growth of Nanoparticles on a Surface Patterned by a Buried Dislocation Network

F. Leroy, G. Renaud, A. Letoublon +3

The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown…

cond-mat2003

Diffraction Anomalous Fine Structure spectroscopy at the beamline BM2 at the European Synchrotron Radiation Facility

H. Renevier, S. Grenier, S. Arnaud +6

Diffraction Anomalous Fine Structure (DAFS) spectroscopy uses resonant elastic x-rays scattering as an atomic, shell and site selective probe that gives information on the electron…

cond-mat2003★ 51 cited

Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

A. Letoublon, V. Favre-Nicolin, H. Renevier +5

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs),…