402 citations · 919 across the 21 of their papers we have counts for
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Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
Resistless EUV lithography: photon-induced oxide patterning on silicon
Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis +7
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading litho…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…