402 citations · 902 across the 22 of their papers we have counts for
6 papers · 1 filter
Imaging the Acceptor Wave Function Anisotropy in Silicon
Manuel Siegl, Julian Zanon, Joseph Sink +5
We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM i…
Materials for Quantum Technologies: a Roadmap for Spin and Topology
N. Banerjee, C. Bell, C. Ciccarelli +22
In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D material…
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Megan Cowie, Procopios C. Constantinou, Neil J. Curson +2
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state fluctuations are localize…
Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices
Nguyen H. Le, Andrew J. Fisher, Neil J. Curson +1
Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional di…
2D-3D crossover in a dense electron liquid in silicon
Guy Matmon, Eran Ginossar, Byron J. Villis +9
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information…
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
Kitiphat Sinthiptharakoon, Steven R. Schofield, Philipp Studer +4
We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant…